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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1507 DESCRIPTION *With TO-3PML package *Low collector saturation voltage *Complement to type 2SD2280 *Wide area of safe operation APPLICATIONS *For use in relay drivers ,high-speed Inverters,converters PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX -60 -50 -6 -7 -20 3.0 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE== IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A ;IB=-0.4A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -50 -60 -6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2SB1507 TYP. MAX UNIT V V V -0.4 -100 -100 280 V A A 10 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A RL=10B;VCCC20V 0.2 0.7 0.1 s s s hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1507 Fig.2 outline dimensions 3 |
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